data sheet 1 of 10 rev. 04, 2009-07-16 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! PTFA142401EL ptfa142401fl confidential, limited internal distribution ptfa142401fl package h-34288-2 description the PTFA142401EL and ptfa142401fl are 240-watt ldmos fets designed for dvb and dab applications in the 1450 to 1500 mhz frequency band. features include internal i/o matching and thermally- enhanced packages with slotted or earless flanges. manufactured with infineon's advanced ldmos process, these devices provide excellent thermal performance and superior reliability. PTFA142401EL package h-33288-2 thermally-enhanced high power rf ldmos fet 240 w, 1450 ? 1500 mhz dvb-t drive-up v dd = 30 v, i dq = 2000 ma, ? = 1475 mhz, dvb-t signal, par = 9.65 db at 0.01%, 8 mhz bw acpr = 1475+/-4.3 mhz delta marker, 30 khz rbw -45 -40 -35 -30 -25 42 43 44 45 46 47 48 49 average output power (dbm) 0 10 20 30 40 drain efficiency (%) acpr hi adjacent channel power ratio (db) efficiency acpr low features ? pb-free, rohs-compliant and thermally-enhanced packages with less than 0.25 micron au plating ? broadband internal matching ? typical dvb-t performance at 1475 mhz, 30 v - average output power = 47.0 dbm - linear gain = 16.0 db - efficiency = 27.5% - adjacent channel power = ?32 dbc ? typical cw performance, 1475 mhz, 30 v - output power at p?1db = 240 w - efficiency = 52% ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability, low hci drift ? capable of handling 10:1 vswr @ 30 v, 200?w?(cw) output power *see infineon distributor for future availability. rf characteristics dvb-t measurements ( not subject to production test?verified by design/characterization in infineon test fixture) v dd = 30 v, i dq = 2.0 a, p out = 50 w average ? = 1475 mhz dvb-t, channel bandwidth = 8.0 mhz , peak/average = 9.65 db @ 0.01% ccdf characteristic symbol min typ max unit gain g ps ? 16.5 ? db drain efficiency h d ? 27.5 ? % adjacent channel power ratio (4.3 mhz offset, 30 khz rbw) acpr ? ?32 ? dbc www..net
data sheet 2 of 10 rev. 04, 2009-07-16 PTFA142401EL ptfa142401fl confidential, limited internal distribution rf characteristics (cont.) two-tone measurements (tested in infineon test fixture) v dd = 30 v, i dq = 2.0 a, p out = 240 w pep, ? = 1500 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 15.0 16.0 ? db drain efficiency h d 40 43 ? % intermodulation distortion imd ? ?31 ?29 dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a drain leakage current v ds = 63 v, v gs = 0 v i dss ? ? 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.05 ? w operating gate voltage v ds = 30 v, i dq = 2.0 a v gs 2.0 2.5 3.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 625 w above 25c derate by 3.57 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c, 240 w cw) r q jc 0.28 c/w ordering information type and version package outline package description shipping marking PTFA142401EL v4 h-33288-2 thermally-enhanced, slotted flange, tray PTFA142401EL single-ended ptfa142401fl v4 h-34288-2 thermally-enhanced, earless flange, tray ptfa142401fl single-ended *see infineon distributor for future availability.
data sheet 3 of 10 rev. 04, 2009-07-16 PTFA142401EL ptfa142401fl confidential, limited internal distribution pulsed cw characteristics v dd = 30 v, i dq = 1800 ma, ? = 1475 mhz 10 s pulse time, 10% duty cycle 47 49 51 53 55 57 59 30 32 34 36 38 40 42 input power (dbm) output power (dbm) measured p out ideal p out broadband performance v dd = 30 v, i dq = 2000 ma, p out = 50 w 10 15 20 25 30 35 40 1400 1430 1460 1490 1520 1550 frequency (mhz) gain (db), efficiency (%) -30 -25 -20 -15 -10 -5 0 input return loss (db) gain efficiency return loss power sweep, cw conditions v dd = 30 v, i dq = 2000 ma, ? = 1475 mhz 12 13 14 15 16 17 0 40 80 120 160 200 240 280 output power (w) gain (db) 10 20 30 40 50 60 drain efficiency (%) gain efficiency typical performance (data taken in an infineon test fixture) two-tone drive-up v dd = 30 v, i dq = 2000 ma, ? = 1475 mhz, tone spacing = 1 mhz -65 -60 -55 -50 -45 -40 -35 -30 -25 45 47 49 51 53 55 output power, pep (dbm) 5 10 15 20 25 30 35 40 45 drain efficiency (%) im5 efficiency im7 intermodulation distortion (dbc) im3
data sheet 4 of 10 rev. 04, 2009-07-16 PTFA142401EL ptfa142401fl confidential, limited internal distribution typical performance (cont.) bias voltage vs. temperature voltage normalized to typical gate voltage, series show current 0.98 0.98 0.99 0.99 1.00 1.00 1.01 1.01 1.02 1.02 1.03 1.03 -20 0 20 40 60 80 100 case temperature (c) normalized bias voltage (v) 2.33 a 4.65 a 6.99 a 9.33 a 11.64 a 13.98 a 16.32 a 18.66 a 21.00 a cw power sweep (p?1db) v dd = 30 v, i dq = 1.8 a, ? = 1500 mhz 13 14 15 16 17 18 0 40 80 120 160 200 240 280 output power (w) gain (db) 10 20 30 40 50 60 drain efficiency (%) drain efficiency t case = 25c t case = 90c gain gain vs. output power v dd = 30 v, ? = 1500 mhz 15.0 15.5 16.0 16.5 17.0 0 40 80 120 160 200 240 output power (w) power gain (db) i dq = 1800 ma i dq = 1500 ma i dq = 1200 ma i dq = 600 ma i dq = 900 ma
data sheet 5 of 10 rev. 04, 2009-07-16 PTFA142401EL ptfa142401fl confidential, limited internal distribution z source z load g s d frequency z source w z load w mhz r jx r jx 1450 2.3 ?6.4 1.2 ?1.4 1463 2.3 ?6.2 1.2 ?1.3 1475 2.2 ?6.0 1.2 ?1.2 1488 2.2 ?5.8 1.2 ?1.2 1500 2.1 ?5.7 1.2 ?1.1 broadband circuit impedance 0.1 0.2 0 . 1 0 . 1 0 . 2 - w a v e l e n g t h s t o w a r d g e < - - - w a v e l e n g t h s t o w a r d l o a d - 0 . 0 1450 mhz 1500 mhz z load z source 1450 mhz 1500 mhz z 0 = 50 w see next page for circuit information
data sheet 6 of 10 rev. 04, 2009-07-16 PTFA142401EL ptfa142401fl confidential, limited internal distribution v66100-g9259-d331-01-7606.dwg r4 2k v r1 1.2k v c7 33pf l 1 dut j1 c6 7.5pf c5 0.1f c4 10f 35v r7 5.1k v r6 10 v c14 10f 35v l 2 l 3 l 5 l 6 l 4 c8 4.5pf c13 0.1f c16 1f c15 13pf c19 0.1f c18 100f 50v c17 1f c20 10f 35v l 14 c24 1.7pf r3 2k v c3 0.001f c2 0.001f q1 bcp56 r2 1.3k v qq1 lm7805 c1 0.001f v dd r5 10 v v dd l 8 l 7 c21 1.7pf c22 1.7pf l 9 l 10 l2 l 11 l 12 l 13 c23 33pf c12 100f 50v c10 1f c9 13pf c11 1f l1 circuit assembly information dut PTFA142401EL or ptfa142401fl ldmos transistor pcb 0.76 mm [.030"] thick, e r = 4.5 tmm4 2 oz. copper microstrip electrical characteristics at 1475 mhz dimensions: l x w ( mm) dimensions: l x w (in.) l 1 0.038 l , 53.1, w 4.17 x 1.52 0.164 x 0.060 l 2 0.108 l , 47.5, w 11.86 x 1.91 0.467 x 0.075 l 3 0.014 l , 47.5, w 1.57 x 1.91 0.062 x 0.075 l 4 0.012 l , 16.3, w 1.22 x 7.62 0.048 x 0.300 l 5 0.051 l , 8.9, w 5.08 x 15.24 0.200 x 0.600 l 6 0.171 l , 66.9, w 19.10 x 1.02 0.752 x 0.040 l 7, l 8 0.177 l , 60.0, w 19.66 x 1.27 0.774 x 0.050 l 9 0.049 l , 5.0, w 4.80 x 27.94 0.189 x 1.100 l 10 0.065 l , 5.0, w 6.38 x 27.94 0.251 x 1.100 l 11 0.059 l , 10.6, w 5.97 x 12.70 0.235 x 0.500 l 12 0.006 l , 53.1, w 0.71 x 1.52 0.028 x 0.060 l 13 0.011 l , 53.1, w 1.19 x 1.52 0.047 x 0.060 l 14 0.046 l , 53.1, w 5.05 x 1.52 0.199 x 0.060 reference circuit schematic for ? = 1475 mhz reference circuit j2
data sheet 7 of 10 rev. 04, 2009-07-16 PTFA142401EL ptfa142401fl confidential, limited internal distribution reference circuit (cont.) v66100-g9259-d331-01-7631.dwg r7 r6 c4 c6 r1 r2 q1 c2 c3 r4 c1 c12 c24 c21 c8 c7 c23 c20 c19 c13 c14 l1 c11 c9 r3 r5 c5 rf_in c15 c17 c16 c18 l2 qq1 c22 rf_out c10 gnd vdd reference circuit assembly diagram * (not to scale) component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4, c14, c20 tantalum capacitor, 10 f, 35 v digi-key 399-1655-2-nd c5, c13, c19 capacitor, 0.1 f digi-key pcc104bct-nd c6 ceramic capacitor, 7.5 pf atc 100b 7r5 c7, c23 ceramic capacitor, 33 pf atc 100b 330 c8 ceramic capacitor, 4.5 pf atc 100b 4r5 c9, c15 ceramic capacitor, 13 pf atc 100b 130 c10, c11, c16, c17 capacitor, 1 f atc 920c105 c12, c18 electrolytic capacitor, 100 f, 50 v digi-key pce3718ct-nd c21, c22, c24 ceramic capacitor, 1.7 pf atc 100b 1r7 l1, l2 ferrite, 8.9 mm elna magnetics bds 4.6/3/8.9-4s2 q1 transistor infineon technologies bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor, 1.2k ohms digi-key p1.2kgct-nd r2 chip resistor, 1.3k ohms digi-key p1.3kgct-nd r3 chip resistor, 2k ohms digi-key p2kect-nd r4 potentiometer, 2k ohms digi-key 3224w-202etr-nd r5, r7 chip resistor, 5.1k ohms digi-key p5.1kect-nd r6 chip resistor, 10 ohms digi-key p10ect-nd *gerber files for this circuit available on request
data sheet 8 of 10 rev. 04, 2009-07-16 PTFA142401EL ptfa142401fl confidential, limited internal distribution package outline specifications package h-33288-2 c66065-a0003-c723-01-0027 h-33288-2.dwg d iagram notes?unless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specified otherwise. 4. pins: d = drain, s = source, g = gate. 5. lead thickness: 0.102 +0.051/?0.025 [.004 +.002/?.001]. 6. gold plating less than 0.25 micron [10 microinch]. find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower
data sheet 9 of 10 rev. 04, 2009-07-16 PTFA142401EL ptfa142401fl confidential, limited internal distribution c66065-a0003-c724-01-0027 h-34288-2.dwg package outline specifications (cont.) package h-34288-2 d iagram notes?unless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specified otherwise. 4. pins: d = drain, s = source, g = gate. 5. lead thickness: 0.102 +0.051/?0.025 [.004 +.002/?.001]. 6. gold plating less than 0.25 micron [10 microinch]. find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower
data sheet 10 of 10 rev. 04, 2009-07-16 PTFA142401EL/fl v4 confidential, limited internal distribution revision history: 2009-07-16 data sheet previous version: 2009-03-31, data sheet page subjects (major changes since last revision) 6, 7 fixed typing error goldmos ? is a registered trademark of infineon technologies ag. edition 2009-07-16 published by infineon technologies ag 81726 munich , germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international
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